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Samsung Electronics succeeded in developing its fifth-generation high bandwidth memory (HBM) chips HBM3E which has the industry’s largest capacity of 36 gigabytes, the Korean chipmaker said on Tuesday.
The Suwon, Gyeonggi-based manufacturer has already started sending out product samples to its clients and the chips are slated for mass production by the first half of this year.
HBM3E chips can stack twelve 24-gigabit dynamic random access memory (DRAM) chips, making it 50 percent more efficient than its fourth-generation predecessor, HBM3, which can stack eight layers.
For instance, when applying 12-layer HBM3E chips, the speed of AI machine learning will improve by 34 percent compared to 8-layer HBM3 chips, while up to 11.5 times more users will be able to utilize AI services due to increased processing capacity and efficiency.
BY LEE JAE-LIM [lee.jaelim@joongang.co.kr]
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